High-Power High-Temperature HBT with Gallium Nitride Emitter
Source/Type: Astralux Incorporated - White Papers/Technical Papers

November 28, 1996...

J. I. Pankove, M. Leksono, S. S. Chang, C. Walker
Astralux Inc.

B. Van Zeghbroeck
University of Colorado

Abstract

A new heterobipolar transistor was made with the wide bandgap semiconductors, gallium nitride (GaN) and silicon carbide (SiC). The heterojunction allows high injection efficiency, even at elevated temperatures. A record current gain of ten million was obtained at room temperature, decreasing to 100 at 535°C. An Arrhenius plot of current gain vs 1/T yields an activation energy of 0.43 eV that corresponds to the valence band barrier blocking the escape of holes from the base to the emitter. This activation energy is approximately equal to the difference of energy gaps between emitter and base. This Transistor can operate at high power without cooling. A power density of 30 KW/cm2 was sustained.

View the complete article at http://nsr.mij.mrs.org/1/39/.

This article was received by The Materials Research Society, Internet Journal on Thursday, August 15, 1996 and accepted on Thursday, November 28, 1996.

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