Hittite Reports Substantial Growth in 2008 with Military Contract Win
CompoundSemi News StaffFebruary 23, 2009...During an earnings conference call for 2008 earnings, Hittite Microwave revealed an award of a $35 million contract to deliver hardware for a U.S. military weapon system. Hittite pointed out that the contract win was in an extremely competitive environment.
Hittite indicated that it will initiate production for the project in the coming months, with product shipments and revenues for project expected to begin in the first half of 2010. The shipments for the project are expected to be completed and the revenues realized by the end of 2011. The first 20 percent of the revenue is expected in 2010 with the remainder in 2011.
The company reported a 9.2 percent increase in revenue for 2008 compared to 2007.
Stephen Daly, chairman and CEO, said , "In summary, we are pleased with 2008 results, achieving revenue of $183.3 million and a net income of $53.8 million. Our 15% year-over-year revenue growth was driven by our existing and new products, the expansion of our sales channels and the improved penetration of our targeted markets."
Daly explained that since 2006, the company launched 10 new product lines with over 330 new products. He said that 32 were launched in the last quarter of 2008 alone.
"Our ability to capture market share depends on our ability to execute successful MMICs design, product launch and design win activities. We remain steadfast on executing our long term strategy of launching innovative products and new product lines, which outperform the competition," Daly said.
Company Financial Results for 2008
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ASE and AMPI to Sign MOU to Offer Turnkey Services Power IC Customers
CompoundSemi News StaffFebruary 23, 2009...Advanced Semiconductor Engineering (ASE), a provider of semiconductor manufacturing services based in Taipei, Taiwan, and Advanced Microelectronic Products Inc., a wafer foundry service provider for power electronics of Hsinchu, Taiwan, signed a memorandum of understanding (MOU) to enter a strategic alliance. The MOU indicated their intent to enter into a strategic alliance focused to provide semiconductor manufacturing turnkey services for customers in the MOSFET, power IC, and discrete markets.
According to ASE the strategic relationship also aims to provide seamless manufacturing services to turnkey customers leveraging the alignment of ASE and AMPI's IT infrastructures and systems, co-development of process and product related technologies, as well as joint marketing programs. ASE noted that it and AMPI are committed to the future cooperation in and collaboration on continuous quality improvement, and enhanced support and services.
"Forming this strategic alliance with AMPI strengthens ASE's position while expanding our footprint in the MOSFET, power IC, and discrete markets," said Dr. Tien Wu, chief operating officer, ASE Group. "ASE has significantly escalated our discrete manufacturing capabilities, and this MOU with AMPI accentuates our solid commitment to customers seeking a complete turnkey service, as well as faster time-to-market."
"This further alliance with ASE marks an important milestone for AMPI, as it marks the completion of our vertically integrated manufacturing strategy in power semiconductors. Through such vertical alliances platform, we will offer the most complete, flexible, and customer oriented 'one-stop' and value-added services and solutions to our customers,"
said Dr. Hong Yuan Chen, president, AMPI. ASE News Release Centrotherm Photovoltaics Receives Order for CIGS Thin-Film Production Line
CompoundSemi News StaffFebruary 23, 2009...Centrotherm Photovoltaics of Blaubeuren, Germany will supply Illies Renewables GmbH a 50 MW production line for thin-film CIGS solar cells. Illies Renewables of Hamburg plans on using the production line at its facility in Magdeburg-Rothensee, Germany. The order volume is in excess of EUR 60 million. Delivery of the lines is expected to begin in the first half of 2010.
"It gives us great pleasure to support Illies Renewables in their entry into thin-film technology," commented Hans Autenrieth, member of the board of centrotherm photovoltaics AG. "This order provides further confirmation that we have backed a pioneering technology in CIGS." CIGS is currently the most efficient form of thin-film technology, achieving a rate of more than 20 percent in research settings.
Centrotherm News Release
Cree and Powerex Develop New SiC Power Switches for Military Systems
CompoundSemi News StaffFebruary 19, 2009...Cree Inc. has collaborated with the United States Air Force Research Laboratory (AFRL) Propulsion Directorate and high-power module pioneer Powerex, Inc., to develop a prototype dual switch 1200-volt, 100-amp power module featuring all-SiC semiconductors. According to Cree the switch is capable of operating at junction temperatures up to 200 degrees C. Cree boasts that the combination of advanced SiC devices and innovative package design allows the module to operate at temperatures beyond those achievable with a silicon IGBT-based module.
The AFRL funded development features Cree high-current SiC MOSFETs and SiC Schottky diodes, which were developed under contracts from Army Research Laboratory (ARL). The SiC metal oxide semiconductor field effect transistors (MOSFETs) are normally-off devices, and they have drive requirements equivalent to the silicon IGBT devices they replace. Cree points out that for this reason, the SiC module is a potential drop-in replacement for most applications.
According to Cree, the all-SiC power switch module can be an enabling technology for next-generation military aircraft and future Army combat systems. Cree notes that the combination of its SiC devices and Powerex packaging technology could lead to smaller, lighter-weight systems with reduced cooling requirements that simultaneously offer increased reliability and overload capacity because of its high-temperature operation capability.
Cree says that the low conduction and switching losses make the module ideal applications requiring high efficiency such as solar energy power inverters and electric drives, and power conversion for hybrid and electric vehicles. Cree News Release Solar Market Correction Underway
CompoundSemi News StaffFebruary 19, 2009...Oversupply in the solar market will lead to company failures, but it will set the stage for long-term growth for survivors, according to the latest report from Lux Research. The report entitled "Finding the Solar Market's Nadir," predicts that the available capacity of solar cells and modules will measure twice the demand in 2009. Despite the oversupply the world economic crisis and lower oil prices are expected to contribute a demand shrinkage in 2009 going from $36 billion over 5.5 GW to $29 billion over 5.3 GW this year.
The researchers found that as of the beginning of 2009 there were 184 polysilicon producers, 162 crystalline silicon cell and module makers, 29 high-concentrating PV (HCPV) developers, 91 thin-film silicon producers, 10 cadmium telluride (CdTe) thin-film module manufacturers, 33 copper indium (gallium) diselenide (CIGS/CIS) developers, and 12 solar thermal providers. The capacity for amorphous silicon and CdTe, and CIGS will increase overall despite expectations of widespread company failure, the report indicates.
Ted Sullivan, Senior Analyst at Lux Research, and the report's lead author said, "In order to reduce inventories, suppliers will have slashed their cell and module prices by 25% or more. While this spells a shakeout in the near term, the price reductions will push solar closer to grid parity and prime the market for recovery and growth."
Lux Research News Release RFMD Introduces Converged 3G/4G Front End Platform and Family of 2G Transmit Modules
CompoundSemi News StaffFebruary 17, 2009...RFMD has reportedly released components for the most advanced 3G and 4G technology while also introducing lower cost 2G transmit modules for emerging markets.
The company of Greensboror, North Carolina USA has introduced what it says is the first converged 3G/4G cellular front end platform that can cover nine cellular bands. The RF6460 offers multimode architecture (2G/2.5G/3G/4G) that the company says is the most efficient in its class. RFMD boasts that it also eases implementation, shrinks solution size and reduces component placements, versus mode-specific and band-specific architectures. The company says that supporting up to nine bands helps the RF6460 simplify the design, reduce the cost and accelerate the implementation of 3G and 4G multimode mobile devices. Company News Release.
RFMD also introduced a family of 2G dual-band transmit modules, the RF716x family (EGSM900/DCS1800 or GSM850/PCS1900) GSM/GPRS transmit modules. According to the company, the RF716x product family is designed to meet the front end requirements of emerging markets' handsets, including reduced solution size, improved efficiency, and robust ESD protection. At the same time, the company says the modules satisfy the need for quality, reliability and reduced handset bill-of-material (BOM) costs.
Paul Augustine, general manager of RFMD's Components Solutions Business Unit, said, "The RF716x family of high performance transmit modules helps manufacturers of emerging market handsets lower their bill of material (BOM) costs, reduce size and accelerate product time-to-market without sacrificing the quality and reliability they have come to expect from RFMD."
Company News Release
Dilas Introduces Introduces Wavelength Stabilized Diode Lasers
CompoundSemi News StaffFebruary 17, 2009...Dilas, a maker of diode lasers based in Mainz, Germany, has reportedly
introduced wavelength stabilized technology for its high-power fiber-coupled diode lasers.
Dilas says that the new wavelength stabilized fiber-coupled diode lasers
provide superior wavelength stability despite wide variation in temperature, current and operating hours. The new wavelength stabilized fiber-coupled diode lasers range from a model with a 25W output from a 200µm up to one with 400W output from a 400µm fiber core diameter (0.22NA). According to the company, with the narrow line width of <0.5nm at full width half maximum, the typical wavelength-temperature drift is 0.01nm per Kelvin.
Dilas contends that its wavelength stabilized technology has high spectral brightness in both ideal and harsh operating environments. The company notes that improving the wavelength stability of the diode lasers leads to higher system efficiency, higher reliability, longer lifetime and overall lower operating costs.
Dilas offers wavelength stabilized technology in fiber-coupled diode lasers at stabilized wavelengths of 808nm, 940nm, 976nm or 981nm. Other wavelengths like 795nm are available on request.
Dilas says its diode lasers are an ideal solution for customers demanding high power and high brightness in their applications with a narrow absorption bandwidth such as pumping of solid-state lasers, fiber lasers and optical pumping of alkaline vapors. Company News Release Tonghui Electronics to enter LED market with Aixtron MOCVD tools
CompoundSemi News StaffFebruary 17, 2009...Tonghui Electronics Corp., a startup LED maker based in China, has reportedly ordered three Aixtron MOCVD tools. Aixtron says that the order is for its AIX 2800G4 HT IC Planetary Reactor system, Aixtron’s flagship reactor for large-scale manufacturing of LEDs and other advanced devices, and two AIX 2600G3 IC systems.
The AIX 2800G4 HT IC tool is configured for 42x2” wafer capacity, and the two G3 systems are to be shipped with the 49x2” configuration in the first quarter of 2009, their respectively third quarter of fiscal 2008. Tongui Electronics notes that all three systems will be used for the development and manufacture of Power Chip LEDs.
Prof. Liu, of Tonghui Electronics Corp. commented, "Aixtron has been a dependable provider and supporter of MOCVD equipment and process technology for over a decade. We have used their tools and based on this good experience we have decided to place with them our first major order for LED equipment. The large-scale reactors underpin our present and future production plans. We intend to become a renowned provider of new high performance optoelectronic devices starting with power LEDs and in future we might also add III-V concentrator photovoltaics to our production range." Aixtron News Release
Cree and Powerex Develop New SiC Power Switches for Military Systems
CompoundSemi News StaffFebruary 19, 2009...Cree Inc. has collaborated with the United States Air Force Research Laboratory (AFRL) Propulsion Directorate and high-power module pioneer Powerex, Inc., to develop a prototype dual switch 1200-volt, 100-amp power module featuring all-SiC semiconductors. According to Cree the switch is capable of operating at junction temperatures up to 200 degrees C. Cree boasts that the combination of advanced SiC devices and innovative package design allows the module to operate at temperatures beyond those achievable with a silicon IGBT-based module.
The AFRL funded development features Cree high-current SiC MOSFETs and SiC Schottky diodes, which were developed under contracts from Army Research Laboratory (ARL). The SiC metal oxide semiconductor field effect transistors (MOSFETs) are normally-off devices, and they have drive requirements equivalent to the silicon IGBT devices they replace. Cree points out that for this reason, the SiC module is a potential drop-in replacement for most applications.
According to Cree, the all-SiC power switch module can be an enabling technology for next-generation military aircraft and future Army combat systems. Cree notes that the combination of its SiC devices and Powerex packaging technology could lead to smaller, lighter-weight systems with reduced cooling requirements that simultaneously offer increased reliability and overload capacity because of its high-temperature operation capability.
Cree says that the low conduction and switching losses make the module ideal applications requiring high efficiency such as solar energy power inverters and electric drives, and power conversion for hybrid and electric vehicles. Cree News Release Solar Market Correction Underway
CompoundSemi News StaffFebruary 19, 2009...Oversupply in the solar market will lead to company failures, but it will set the stage for long-term growth for survivors, according to the latest report from Lux Research. The report entitled "Finding the Solar Market's Nadir," predicts that the available capacity of solar cells and modules will measure twice the demand in 2009. Despite the oversupply the world economic crisis and lower oil prices are expected to contribute a demand shrinkage in 2009 going from $36 billion over 5.5 GW to $29 billion over 5.3 GW this year.
The researchers found that as of the beginning of 2009 there were 184 polysilicon producers, 162 crystalline silicon cell and module makers, 29 high-concentrating PV (HCPV) developers, 91 thin-film silicon producers, 10 cadmium telluride (CdTe) thin-film module manufacturers, 33 copper indium (gallium) diselenide (CIGS/CIS) developers, and 12 solar thermal providers. The capacity for amorphous silicon and CdTe, and CIGS will increase overall despite expectations of widespread company failure, the report indicates.
Ted Sullivan, Senior Analyst at Lux Research, and the report's lead author said, "In order to reduce inventories, suppliers will have slashed their cell and module prices by 25% or more. While this spells a shakeout in the near term, the price reductions will push solar closer to grid parity and prime the market for recovery and growth."
Lux Research News Release RFMD Introduces Converged 3G/4G Front End Platform and Family of 2G Transmit Modules
CompoundSemi News StaffFebruary 17, 2009...RFMD has reportedly released components for the most advanced 3G and 4G technology while also introducing lower cost 2G transmit modules for emerging markets.
The company of Greensboror, North Carolina USA has introduced what it says is the first converged 3G/4G cellular front end platform that can cover nine cellular bands. The RF6460 offers multimode architecture (2G/2.5G/3G/4G) that the company says is the most efficient in its class. RFMD boasts that it also eases implementation, shrinks solution size and reduces component placements, versus mode-specific and band-specific architectures. The company says that supporting up to nine bands helps the RF6460 simplify the design, reduce the cost and accelerate the implementation of 3G and 4G multimode mobile devices. Company News Release.
RFMD also introduced a family of 2G dual-band transmit modules, the RF716x family (EGSM900/DCS1800 or GSM850/PCS1900) GSM/GPRS transmit modules. According to the company, the RF716x product family is designed to meet the front end requirements of emerging markets' handsets, including reduced solution size, improved efficiency, and robust ESD protection. At the same time, the company says the modules satisfy the need for quality, reliability and reduced handset bill-of-material (BOM) costs.
Paul Augustine, general manager of RFMD's Components Solutions Business Unit, said, "The RF716x family of high performance transmit modules helps manufacturers of emerging market handsets lower their bill of material (BOM) costs, reduce size and accelerate product time-to-market without sacrificing the quality and reliability they have come to expect from RFMD."
Company News Release
Dilas Introduces Introduces Wavelength Stabilized Diode Lasers
CompoundSemi News StaffFebruary 17, 2009...Dilas, a maker of diode lasers based in Mainz, Germany, has reportedly
introduced wavelength stabilized technology for its high-power fiber-coupled diode lasers.
Dilas says that the new wavelength stabilized fiber-coupled diode lasers
provide superior wavelength stability despite wide variation in temperature, current and operating hours. The new wavelength stabilized fiber-coupled diode lasers range from a model with a 25W output from a 200µm up to one with 400W output from a 400µm fiber core diameter (0.22NA). According to the company, with the narrow line width of <0.5nm at full width half maximum, the typical wavelength-temperature drift is 0.01nm per Kelvin.
Dilas contends that its wavelength stabilized technology has high spectral brightness in both ideal and harsh operating environments. The company notes that improving the wavelength stability of the diode lasers leads to higher system efficiency, higher reliability, longer lifetime and overall lower operating costs.
Dilas offers wavelength stabilized technology in fiber-coupled diode lasers at stabilized wavelengths of 808nm, 940nm, 976nm or 981nm. Other wavelengths like 795nm are available on request.
Dilas says its diode lasers are an ideal solution for customers demanding high power and high brightness in their applications with a narrow absorption bandwidth such as pumping of solid-state lasers, fiber lasers and optical pumping of alkaline vapors. Company News Release Our news features are reported
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